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IoT gateways and edge computing
With a dual-core Arm Cortex-M0+ processor
and extensive I/O
Cooling Fan: Active cooling for sustained high-power operation
IRF9Z34N MOSFET 74HC273 SMD SOP IoT gateways and edge computingIRF9Z34N MOSFET Details: Type of Transistor: MOSFET Type of Control Channel: P Channel Pd Maximum Power Dissipation: 68 W Vds Maximum Drain Source Voltage: 55 V Vgs Maximum Gate Source Voltage: 20 V Vgs(th) Maximum Gate Threshold Voltage: 4 V Id Maximum Drain Current: 19 A Tj Maximum Junction Temperature: 175 C Qg Total Gate Charge: 35(max) nC tr Rise Time: 55 nS Coss Output Capacitance: 280 pF Rds Maximum Drain Source On State Resistance: 0. 1 Ohm
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